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NDS9945.
Dual MOSFET, N Channel, 60 V, 3.5 A, 0.1 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.990 ($2.2885) |
| 500+ | $1.660 ($1.909) |
| 1000+ | $1.520 ($1.748) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$199.00 ($228.85 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNDS9945.
Order Code1653654RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id3.5A
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel3.5A
On Resistance Rds(on)0.1ohm
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.1ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Gate Source Threshold Voltage Max1.7V
Transistor Case StyleSOIC
Power Dissipation Pd1.6W
No. of Pins8Pins
Power Dissipation N Channel1.6W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The NDS9945 is a dual N-channel enhancement-mode MOSFET produced using high cell density and DMOS technology. This high density process is especially tailored to provide superior switching performance and minimize ON-state resistance. The device is particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- ±20V Gate to source voltage
- 3.5A Continuous drain current
- 10A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
3.5A
Continuous Drain Current Id N Channel
3.5A
Continuous Drain Current Id P Channel
-
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
0.1ohm
Drain Source On State Resistance N Channel
0.1ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.7V
Power Dissipation Pd
1.6W
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000227