NTJD1155LT1G
Dual MOSFET, Complementary N and P Channel, 8 V, 8 V, 1.3 A, 1.3 A, 0.13 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $0.639 ($0.7348) |
| 10+ | $0.498 ($0.5727) |
| 100+ | $0.310 ($0.3565) |
| 500+ | $0.248 ($0.2852) |
Product Information
Product Overview
The NTJD1155LT1G is a P and N-channel Power MOSFET particularly suited for portable electronic equipment's where low control signals, low battery voltages and high load currents are needed. The P-channel device is specifically designed as a load switch using state-of-the-art Trench technology. The N-channel, with an external resistor (R1), functions as a level-shift to drive the P-channel. The N-channel MOSFET has internal ESD protection and it can be driven by logic signals as low as 1.5V. The NTJD1155L operates on supply lines from 1.8 to 8V and can drive loads up to 1.3A with 8V applied to both VIN and VON/OFF.
- Extremely low RDS (ON) P-channel load switch MOSFET
- Level shift MOSFET is ESD protected
- Low profile, small footprint package
- 1.5 to 8V ON/OFF range
- -55 to 150°C Operating junction temperature range
Applications
Portable Devices, Power Management, Industrial
Technical Specifications
Complementary N and P Channel
8V
1.3A
0.13ohm
6Pins
400mW
-
MSL 1 - Unlimited
8V
1.3A
0.13ohm
SC-88
400mW
150°C
-
No SVHC (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate