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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFS6H801NT1G
Order Code2835596
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id157A
Drain Source On State Resistance2300µohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation166W
No. of Pins5Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
NTMFS6H801NT1G is a single N-channel power MOSFET. It has low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses.
- 157A continuous drain current
- Drain-to-source breakdown voltage is 80V minimum at (VGS = 0V, ID = 250µA)
- Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
- Threshold temperature coefficient is 7.2mV/°C typical at (TJ = 25°C)
- Drain-to-source on resistance is 2.3mohm typical at (VGS = 10V, ID = 50A)
- Input capacitance is 4120pF typical at (VGS = 0V, f = 1MHz, VDS = 40V)
- Turn-on delay time is 25ns typical at (VGS = 10V, VDS = 64V, ID = 50A, RG = 2.5 ohm)
- Rise time is 74ns typical at (VGS = 10V, VDS = 64V, ID = 50A, RG = 2.5 ohm)
- Zero gate voltage drain current is 10µA maximum at (TJ = 25°C)
- Junction temperature range from -55°C to +175°C, DFN5 package
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
157A
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Power Dissipation
166W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
2300µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
5Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000024