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NVMFS6H800NT1G
Power MOSFET, N Channel, 80 V, 203 A, 0.0018 ohm, DFN, Surface Mount
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $9.180 ($10.557) |
| 10+ | $7.040 ($8.096) |
| 100+ | $5.090 ($5.8535) |
| 500+ | $5.010 ($5.7615) |
| 1500+ | $4.920 ($5.658) |
| 3000+ | $4.840 ($5.566) |
| 4500+ | $4.750 ($5.4625) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$9.18 ($10.56 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVMFS6H800NT1G
Order Code2895666
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id203A
Drain Source On State Resistance0.0018ohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation200W
No. of Pins5Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
203A
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Power Dissipation
200W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0018ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
5Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454