RFD14N05LSM
Power MOSFET, N Channel, 50 V, 14 A, 0.1 ohm, TO-252 (DPAK), Surface Mount
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $1.620 ($1.863) |
| 10+ | $0.743 ($0.8544) |
| 100+ | $0.730 ($0.8395) |
| 500+ | $0.716 ($0.8234) |
| 1000+ | $0.703 ($0.8084) |
| 5000+ | $0.689 ($0.7924) |
Product Information
Product Overview
The RFD14N05LSM is a N-channel logic level Power MOSFET produced using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.
- Temperature compensating PSPICE® model
- Can be driven directly from CMOS, NMOS and TTL circuits
- Peak current vs pulse width curve
- UIS rating curve
Applications
Power Management, Motor Drive & Control
Technical Specifications
N Channel
14A
TO-252 (DPAK)
5V
48W
175°C
-
Lead (27-Jun-2024)
50V
0.1ohm
Surface Mount
2V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate