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FDC6561AN
Dual MOSFET, N Channel, 30 V, 2.5 A, 0.082 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.626 ($0.7199) |
| 500+ | $0.512 ($0.5888) |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6561AN
Order Code9844813RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id2.5A
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)0.082ohm
Continuous Drain Current Id N Channel2.5A
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.082ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max1.8V
No. of Pins6Pins
Power Dissipation Pd960mW
Power Dissipation N Channel960mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC6561AN is a dual N-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for all applications where small size is desirable but especially DC-to-DC conversion in battery powered systems.
- Low gate charge
- Very fast switching
- Small footprint
- Low profile
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
2.5A
On Resistance Rds(on)
0.082ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.082ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
1.8V
Power Dissipation Pd
960mW
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
2.5A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SuperSOT
No. of Pins
6Pins
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for FDC6561AN
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Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000043