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FDME1024NZT
Dual MOSFET, N Channel, 20 V, 20 V, 3.8 A, 3.8 A, 0.055 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.838 ($0.9637) |
| 500+ | $0.544 ($0.6256) |
| 5000+ | $0.504 ($0.5796) |
| 15000+ | $0.495 ($0.5692) |
| 40000+ | $0.485 ($0.5578) |
| 75000+ | $0.474 ($0.5451) |
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Minimum: 100
Multiple: 5
$83.80 ($96.37 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDME1024NZT
Order Code2083357RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id3.8A
Continuous Drain Current Id N Channel3.8A
On Resistance Rds(on)0.055ohm
Continuous Drain Current Id P Channel3.8A
Drain Source On State Resistance N Channel0.055ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.055ohm
Gate Source Threshold Voltage Max700mV
Transistor Case StyleµFET
No. of Pins6Pins
Power Dissipation Pd1.4W
Power Dissipation N Channel1.4W
Power Dissipation P Channel1.4W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDME1024NZT is a dual N-channel PowerTrench® MOSFET designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It has two independent N-channel MOSFETs with low ON-state resistance for minimum conduction losses. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
- Low profile
- Halogen-free
- ±8V Gate to source voltage
- 3.8A Continuous drain current
- 6A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
3.8A
Continuous Drain Current Id P Channel
3.8A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.055ohm
Transistor Case Style
µFET
Power Dissipation Pd
1.4W
Power Dissipation P Channel
1.4W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
3.8A
On Resistance Rds(on)
0.055ohm
Drain Source On State Resistance N Channel
0.055ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
700mV
No. of Pins
6Pins
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000054