Print Page
FDS89141
Dual MOSFET, N Channel, 100 V, 100 V, 3.5 A, 3.5 A, 0.047 ohm
Image is for illustrative purposes only. Please refer to product description.
7,720 total stock globally
Need more?
7720 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $3.030 ($3.4845) |
| 500+ | $2.480 ($2.852) |
| 1000+ | $2.310 ($2.6565) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$303.00 ($348.45 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS89141
Order Code2083349RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds100V
Continuous Drain Current Id3.5A
Drain Source Voltage Vds P Channel100V
Continuous Drain Current Id N Channel3.5A
On Resistance Rds(on)0.047ohm
Continuous Drain Current Id P Channel3.5A
Drain Source On State Resistance N Channel0.047ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.047ohm
Gate Source Threshold Voltage Max3.1V
Transistor Case StyleSOIC
Power Dissipation Pd31W
No. of Pins8Pins
Power Dissipation N Channel31W
Power Dissipation P Channel31W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDS89141 is a dual N-channel shielded gate MOSFET produced using advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for RDS (ON), switching performance and ruggedness. The device is suitable for use with synchronous rectifier and primary switch for bridge topology applications.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- ±20V Gate to source voltage
- 3.5A Continuous drain current
- 18A Pulsed drain current
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id
3.5A
Continuous Drain Current Id N Channel
3.5A
Continuous Drain Current Id P Channel
3.5A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.047ohm
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
31W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source Voltage Vds P Channel
100V
On Resistance Rds(on)
0.047ohm
Drain Source On State Resistance N Channel
0.047ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3.1V
Power Dissipation Pd
31W
Power Dissipation N Channel
31W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000272