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FDS89161LZ
Dual MOSFET, N Channel + Schottky, 100 V, 100 V, 2.7 A, 2.7 A, 0.105 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDS89161LZ
Order Code2825190RL
Your Part Number
Technical Datasheet
222 total stock globally
2,500 more incoming. You can reserve stock now
222 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.710 ($1.9665) |
| 500+ | $1.310 ($1.5065) |
| 1000+ | $1.210 ($1.3915) |
| 5000+ | $1.180 ($1.357) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$171.00 ($196.65 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS89161LZ
Order Code2825190RL
Technical Datasheet
Channel TypeN Channel + Schottky
Transistor PolarityN Channel + Schottky
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds100V
Continuous Drain Current Id2.7A
Drain Source Voltage Vds P Channel100V
Continuous Drain Current Id N Channel2.7A
On Resistance Rds(on)0.105ohm
Continuous Drain Current Id P Channel2.7A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.105ohm
Drain Source On State Resistance P Channel0.105ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation Pd1.6W
Power Dissipation N Channel1.6W
Power Dissipation P Channel1.6W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel + Schottky
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id
2.7A
Continuous Drain Current Id N Channel
2.7A
Continuous Drain Current Id P Channel
2.7A
Drain Source On State Resistance N Channel
0.105ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
1.6W
Power Dissipation P Channel
1.6W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel + Schottky
Drain Source Voltage Vds
100V
Drain Source Voltage Vds P Channel
100V
On Resistance Rds(on)
0.105ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.105ohm
Gate Source Threshold Voltage Max
1.7V
No. of Pins
8Pins
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004