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FDS9958
Dual MOSFET, P Channel, 60 V, 60 V, 2.9 A, 2.9 A, 0.082 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.200 ($1.380) |
| 500+ | $0.971 ($1.1166) |
| 1000+ | $0.822 ($0.9453) |
| 5000+ | $0.730 ($0.8395) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$120.00 ($138.00 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS9958
Order Code2453429RL
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id2.9A
On Resistance Rds(on)0.082ohm
Continuous Drain Current Id N Channel2.9A
Continuous Drain Current Id P Channel2.9A
Drain Source On State Resistance N Channel0.082ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.082ohm
Gate Source Threshold Voltage Max1.6V
Transistor Case StyleSOIC
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDS9958 is a PowerTrench® dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. This device is well suited for portable electronics applications like load switching and power management, battery charging and protection circuits.
- ±20V Gate to source voltage
- -2.9A Continuous drain current
- -12A Pulsed drain current
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
0.082ohm
Continuous Drain Current Id P Channel
2.9A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.082ohm
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
2.9A
Continuous Drain Current Id N Channel
2.9A
Drain Source On State Resistance N Channel
0.082ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.6V
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000726