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MJW21196G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 250 V, 16 A, 200 W, TO-247, Through Hole
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $6.670 ($7.6705) |
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$6.67 ($7.67 inc GST)
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Product Overview
The MJW21196G is a 250V Silicon NPN Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
- Total harmonic distortion characterized
- High DC current gain
- Excellent gain linearity
- High SOA
Applications
Audio, Industrial
Technical Specifications
Collector Emitter Voltage Max
250V
Power Dissipation
200W
Operating Temperature Max
150°C
Continuous Collector Current
16A
Transition Frequency
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00542