Print Page
NTGD4167CT1G
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.6 A, 2.6 A, 0.052 ohm
Image is for illustrative purposes only. Please refer to product description.
9,096 total stock globally
Need more?
9096 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.514 ($0.5911) |
| 500+ | $0.451 ($0.5187) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$51.40 ($59.11 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTGD4167CT1G
Order Code2533185RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id2.6A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel2.6A
On Resistance Rds(on)0.052ohm
Continuous Drain Current Id P Channel2.6A
Drain Source On State Resistance N Channel0.052ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.052ohm
Rds(on) Test Voltage4.5V
Transistor Case StyleTSOP
Gate Source Threshold Voltage Max900mV
No. of Pins6Pins
Power Dissipation Pd900mW
Power Dissipation N Channel900mW
Power Dissipation P Channel900mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
2.6A
Continuous Drain Current Id N Channel
2.6A
Continuous Drain Current Id P Channel
2.6A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
900mV
Power Dissipation Pd
900mW
Power Dissipation P Channel
900mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.052ohm
Drain Source On State Resistance N Channel
0.052ohm
Drain Source On State Resistance P Channel
0.052ohm
Transistor Case Style
TSOP
No. of Pins
6Pins
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000076