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NTJD4105CT1G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 630 mA, 630 mA, 0.29 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.324 ($0.3726) |
| 500+ | $0.289 ($0.3324) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$32.40 ($37.26 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTJD4105CT1G
Order Code2464121RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id630mA
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.29ohm
Continuous Drain Current Id N Channel630mA
Continuous Drain Current Id P Channel630mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.29ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.29ohm
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max920mV
No. of Pins6Pins
Power Dissipation Pd270mW
Power Dissipation N Channel270mW
Power Dissipation P Channel270mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The NTJD4105CT1G is a -8/20V P and N-channel Small Signal MOSFET designed with low RDS(on) for minimum footprint and increased circuit efficiency. The low RDS (on) performance is particularly suited for single or dual cell Li-Ion battery supplied devices such as cell phones, media players, digital cameras and PDAs.
- Complementary N and P channel device
- Leading -8V trench for low RDS(on) performance
- ESD protected gate- Class 1 ESD rating
- 460°C/W Thermal resistance, junction to ambient
Applications
Communications & Networking, Consumer Electronics, Computers & Computer Peripherals, Multimedia
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
630mA
On Resistance Rds(on)
0.29ohm
Continuous Drain Current Id P Channel
630mA
Drain Source On State Resistance N Channel
0.29ohm
Drain Source On State Resistance P Channel
0.29ohm
Gate Source Threshold Voltage Max
920mV
Power Dissipation Pd
270mW
Power Dissipation P Channel
270mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
630mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
270mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006