Print Page
NTJD4152PT1G
Dual MOSFET, P Channel, 20 V, 20 V, 880 mA, 880 mA, 0.215 ohm
Image is for illustrative purposes only. Please refer to product description.
34,492 total stock globally
Need more?
34492 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.326 ($0.3749) |
| 500+ | $0.320 ($0.368) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$32.60 ($37.49 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTJD4152PT1G
Order Code2533191RL
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id880mA
On Resistance Rds(on)0.215ohm
Continuous Drain Current Id N Channel880mA
Continuous Drain Current Id P Channel880mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.215ohm
Drain Source On State Resistance P Channel0.215ohm
Rds(on) Test Voltage4.5V
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max1.2V
Power Dissipation Pd272mW
No. of Pins6Pins
Power Dissipation N Channel272mW
Power Dissipation P Channel272mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.215ohm
Continuous Drain Current Id P Channel
880mA
Drain Source On State Resistance N Channel
0.215ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1.2V
No. of Pins
6Pins
Power Dissipation P Channel
272mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
880mA
Continuous Drain Current Id N Channel
880mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.215ohm
Transistor Case Style
SOT-363
Power Dissipation Pd
272mW
Power Dissipation N Channel
272mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000046