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NTMFS6H858NLT1G
Power MOSFET, N Channel, 80 V, 30 A, 0.0195 ohm, DFN, Surface Mount
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| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $1.740 ($2.001) |
| 10+ | $1.250 ($1.4375) |
| 100+ | $0.848 ($0.9752) |
| 500+ | $0.492 ($0.5658) |
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Minimum: 5
Multiple: 5
$8.70 ($10.00 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFS6H858NLT1G
Order Code4317973
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id30A
Drain Source On State Resistance0.0195ohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation42W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Power Dissipation
42W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0195ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
4Pins
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000013