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NVJD5121NT1G
Dual MOSFET, N Channel, 60 V, 60 V, 295 mA, 295 mA, 1 ohm
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11,410 total stock globally
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| Quantity | Price (Incl GST) |
|---|---|
| 500+ | $0.160 ($0.184) |
| 3000+ | $0.111 ($0.1277) |
| 9000+ | $0.110 ($0.1265) |
| 24000+ | $0.109 ($0.1253) |
| 45000+ | $0.108 ($0.1242) |
Price for:Each (Supplied on Cut Tape)
Minimum: 500
Multiple: 5
$80.00 ($92.00 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVJD5121NT1G
Order Code2724461RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id295mA
On Resistance Rds(on)1ohm
Continuous Drain Current Id N Channel295mA
Continuous Drain Current Id P Channel295mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel1ohm
Drain Source On State Resistance P Channel1ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max1.7V
Power Dissipation Pd250mW
No. of Pins6Pins
Power Dissipation N Channel250mW
Power Dissipation P Channel250mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
1ohm
Continuous Drain Current Id P Channel
295mA
Drain Source On State Resistance N Channel
1ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.7V
No. of Pins
6Pins
Power Dissipation P Channel
250mW
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
295mA
Continuous Drain Current Id N Channel
295mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
1ohm
Transistor Case Style
SOT-363
Power Dissipation Pd
250mW
Power Dissipation N Channel
250mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000025