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NVMFD6H846NLT1G
Dual MOSFET, N Channel, 80 V, 80 V, 31 A, 31 A, 0.0122 ohm
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1,240 total stock globally
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $2.040 ($2.346) |
| 500+ | $1.970 ($2.2655) |
| 1500+ | $1.880 ($2.162) |
| 3000+ | $1.800 ($2.070) |
| 4500+ | $1.730 ($1.9895) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$204.00 ($234.60 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVMFD6H846NLT1G
Order Code3528519RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel80V
Drain Source Voltage Vds80V
Continuous Drain Current Id31A
Drain Source Voltage Vds P Channel80V
On Resistance Rds(on)0.0122ohm
Continuous Drain Current Id N Channel31A
Continuous Drain Current Id P Channel31A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0122ohm
Drain Source On State Resistance P Channel0.0122ohm
Rds(on) Test Voltage10V
Transistor Case StyleDFN
Gate Source Threshold Voltage Max2V
Power Dissipation Pd34W
No. of Pins8Pins
Power Dissipation N Channel34W
Power Dissipation P Channel34W
Operating Temperature Max175°C
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
80V
Continuous Drain Current Id
31A
On Resistance Rds(on)
0.0122ohm
Continuous Drain Current Id P Channel
31A
Drain Source On State Resistance N Channel
0.0122ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Power Dissipation P Channel
34W
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (27-Jun-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
Drain Source Voltage Vds P Channel
80V
Continuous Drain Current Id N Channel
31A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.0122ohm
Transistor Case Style
DFN
Power Dissipation Pd
34W
Power Dissipation N Channel
34W
Operating Temperature Max
175°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0034