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NXH100B120H3Q0PG
IGBT Module, Dual, 61 A, 1.77 V, 186 W, 150 °C, Module
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ManufacturerONSEMI
Manufacturer Part NoNXH100B120H3Q0PG
Order Code3929800
Product RangeEliteSiC Series
Technical Datasheet
13 total stock globally
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13 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $150.360 ($172.914) |
| 5+ | $131.570 ($151.3055) |
| 10+ | $121.610 ($139.8515) |
Price for:Each
Minimum: 1
Multiple: 1
$150.36 ($172.91 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH100B120H3Q0PG
Order Code3929800
Product RangeEliteSiC Series
Technical Datasheet
IGBT ConfigurationDual
Continuous Collector Current61A
Collector Emitter Saturation Voltage1.77V
Power Dissipation186W
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationPress Fit
Collector Emitter Voltage Max1.2kV
IGBT TechnologyIGBT [Trench/Field Stop]
Transistor MountingPanel
Product RangeEliteSiC Series
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
IGBT Configuration
Dual
Collector Emitter Saturation Voltage
1.77V
Operating Temperature Max
150°C
IGBT Termination
Press Fit
IGBT Technology
IGBT [Trench/Field Stop]
Product Range
EliteSiC Series
Continuous Collector Current
61A
Power Dissipation
186W
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.09