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NXH80T120L3Q0S3G
IGBT Module, Dual [Half Bridge], 75 A, 1.7 V, 188 W, 175 °C, Module
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ManufacturerONSEMI
Manufacturer Part NoNXH80T120L3Q0S3G
Order Code3929816
Product RangeEliteSiC Series
Technical Datasheet
1 total stock globally
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $122.850 ($141.2775) |
| 5+ | $115.170 ($132.4455) |
| 10+ | $112.110 ($128.9265) |
Price for:Each
Minimum: 1
Multiple: 1
$122.85 ($141.28 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH80T120L3Q0S3G
Order Code3929816
Product RangeEliteSiC Series
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current75A
Collector Emitter Saturation Voltage1.7V
Power Dissipation188W
Operating Temperature Max175°C
Transistor Case StyleModule
IGBT TerminationSolder Pin
Collector Emitter Voltage Max1.2kV
IGBT TechnologyIGBT [Trench/Field Stop]
Transistor MountingPanel
Product RangeEliteSiC Series
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
Collector Emitter Saturation Voltage
1.7V
Operating Temperature Max
175°C
IGBT Termination
Solder Pin
IGBT Technology
IGBT [Trench/Field Stop]
Product Range
EliteSiC Series
Continuous Collector Current
75A
Power Dissipation
188W
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.09