SI4532DY
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.9 A, 3.9 A, 0.053 ohm
Need more?
| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.290 ($1.4835) |
| 500+ | $0.947 ($1.0891) |
| 2500+ | $0.935 ($1.0752) |
| 5000+ | $0.923 ($1.0614) |
| 7500+ | $0.916 ($1.0534) |
Product Information
Product Overview
The SI4532DY is a dual N/P-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where switching, low in-line power loss fast and resistance to transients are needed.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
Applications
Industrial, Power Management, Computers & Computer Peripherals
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Complementary N and P Channel
30V
3.9A
0.053ohm
3.9A
Surface Mount
0.053ohm
3V
8Pins
2W
-
-
No SVHC (27-Jun-2024)
Complementary N and P Channel
30V
30V
3.9A
0.053ohm
10V
SOIC
2W
2W
150°C
-
MSL 1 - Unlimited
Alternatives for SI4532DY
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate