Print Page
RQJ0305EQDQS#H1
Power MOSFET, P Channel, 30 V, 3.4 A, 0.11 ohm, SOT-89, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerRENESAS
Manufacturer Part NoRQJ0305EQDQS#H1
Order Code2135194
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.4A
Drain Source On State Resistance0.11ohm
Transistor Case StyleSOT-89
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max-
Power Dissipation1.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 2A - 4 weeks
SVHCNo SVHC (19-Jan-2021)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3.4A
Transistor Case Style
SOT-89
Rds(on) Test Voltage
4.5V
Power Dissipation
1.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (19-Jan-2021)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.11ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
MSL
MSL 2A - 4 weeks
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00005