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BSM120D12P2C005

Silicon Carbide Bipolar (BJT) Single Transistor, N Channel, 120 A, 1.2 kV, 2.7 V

BSM120D12P2C005 - Silicon Carbide Bipolar (BJT) Single Transistor, N Channel, 120 A, 1.2 kV, 2.7 V

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
ROHM ROHM
Manufacturer Part No:
BSM120D12P2C005
Order Code:
2345472
Technical Datasheet:
BSM120D12P2C005   Datasheet
See all Technical Docs

Product Overview

The BSM120D12P2C005 is a N-channel SiC Power Module designed for use with inverter, converter, photovoltaic, wind power generation and induction heating equipment applications. The device offers low surge, low switching loss and high-speed switching possible, reduced temperature dependence.

Applications

Industrial, Motor Drive & Control, Alternative Energy, Power Management, Medical

Product Information

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:
Half-Bridge Module

:
N Channel

:
120A

:
1.2kV

:
-

:
-

:
2.7V

:
780W

:
150°C

:
-

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Technical Docs (3)

Available for back order

More stock available to supplier lead times which is approximately 26/07/21

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$679.10 ( $780.97  Inc. GST)

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