Print Page
BSM300D12P4G101
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 291 A, 1.2 kV, Module
Image is for illustrative purposes only. Please refer to product description.
6 total stock globally
Need more?
6 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $1,470.380 ($1,690.937) |
Price for:Each
Minimum: 1
Multiple: 1
$1,470.38 ($1,690.94 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerROHM
Manufacturer Part NoBSM300D12P4G101
Order Code4168758
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id291A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
No. of Pins11Pins
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max4.8V
Power Dissipation925W
Operating Temperature Max150°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
291A
Drain Source On State Resistance
-
Rds(on) Test Voltage
-
Power Dissipation
925W
Product Range
-
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
No. of Pins
11Pins
Gate Source Threshold Voltage Max
4.8V
Operating Temperature Max
150°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.394