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SCT3080ALGC11
Silicon Carbide Power MOSFET, N Channel, 30 A, 650 V, 0.08 ohm, 18 V, 5.6 V
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ManufacturerROHM
Manufacturer Part NoSCT3080ALGC11
Order Code2678786
Also Known AsSCT3080ALGC11
Technical Datasheet
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Product Information
ManufacturerROHM
Manufacturer Part NoSCT3080ALGC11
Order Code2678786
Also Known AsSCT3080ALGC11
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id30A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.08ohm
Transistor Case StyleTO-247N
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.6V
Power Dissipation134W
Operating Temperature Max175°C
Product Range-
MSLMSL 1 - Unlimited
SVHCLead (23-Jan-2024)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
30A
Drain Source On State Resistance
0.08ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-247N
Rds(on) Test Voltage
18V
Power Dissipation
134W
Product Range
-
SVHC
Lead (23-Jan-2024)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005