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MJE182
Bipolar (BJT) Single Transistor, NPN, 80 V, 3 A, 12.5 W, SOT-32, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoMJE182
Order Code1467923
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Continuous Collector Current3A
Power Dissipation12.5W
Transistor Case StyleSOT-32
Transistor MountingThrough Hole
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The MJE182 is a NPN Low Voltage Transistor manufactured using Epitaxial Planar technology, housed in a plastic package. It is designed for low power audio amplifiers and low current, high speed switching applications.
- High speed switching
Applications
Industrial, Power Management, Audio
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
3A
Transistor Case Style
SOT-32
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage Max
80V
Power Dissipation
12.5W
Transistor Mounting
Through Hole
Product Range
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.06