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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP11NK50Z
Order Code980305002
Technical Datasheet
Drain Source Voltage Vds500V
Continuous Drain Current Id10A
Drain Source On State Resistance0.52ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Product Overview
The STP11NK50Z is a SuperMESH™ N-channel Zener-protected Power MOSFET obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.
- Extremely high dV/dt capability
- 100% Avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- -55 to 150°C Operating junction temperature range
Applications
Power Management, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.52ohm
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
SVHC
No SVHC (21-Jan-2025)
Continuous Drain Current Id
10A
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Morocco
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Morocco
Country in which last significant manufacturing process was carried out
Tariff No:85412900
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002