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STP15N80K5
Power MOSFET, N Channel, 800 V, 14 A, 0.375 ohm, TO-220, Through Hole
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP15N80K5
Order Code2807282
Product RangeMDmesh K5
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $5.300 ($6.095) |
| 10+ | $3.780 ($4.347) |
| 100+ | $3.750 ($4.3125) |
| 500+ | $3.740 ($4.301) |
| 1000+ | $3.730 ($4.2895) |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP15N80K5
Order Code2807282
Product RangeMDmesh K5
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id14A
Drain Source On State Resistance0.375ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation190W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh K5
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
STP15N80K5 is a N-channel MDmesh™ K5 Power MOSFET in D2PAK. This is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Application includes switching.
- 800V VDC, 0.375ohm maximum RDS(on), 14A ID, 190W PTOT
- Industry’s lowest RDS(on) x area, industry’s best figure of merit (FoM)
- Ultra-low gate charge, 100% avalanche tested, Zener-protected
- Gate- source voltage us ±30V, 14A drain current (continuous) at TC = 25°C
- 150mJ Single pulse avalanche energy (starting TJ = 25°C, ID=IAS, VDD= 50V)
- 4.5V/ns peak diode recovery voltage slope
- 0.66°C/W maximum thermal resistance junction-case
- 800V drain-source breakdown voltage (VGS= 0, ID = 1mA)
- 4V typical gate threshold voltage (VDS = VGS, ID = 100µA, TCASE = 25°C)
- TO-220 package, operating junction temperature storage temperature range from -55 to 150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
14A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
190W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
800V
Drain Source On State Resistance
0.375ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
MDmesh K5
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0023