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STQ1NK80ZR-AP
Power MOSFET, N Channel, 800 V, 300 mA, 16 ohm, TO-92, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTQ1NK80ZR-APCopy
Manufacturer Standard Lead Time26 weeks
Order Code2344082
Your Part Number
9,608 total stock globally
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| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $2.390 ($2.7485) |
| 10+ | $1.120 ($1.288) |
| 100+ | $0.992 ($1.1408) |
| 500+ | $0.772 ($0.8878) |
| 1000+ | $0.569 ($0.6544) |
| 5000+ | $0.558 ($0.6417) |
Price for:Each
Minimum: 5
Multiple: 5
$11.95 ($13.74 inc GST)
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTQ1NK80ZR-APCopy
Manufacturer Standard Lead Time26 weeks
Order Code2344082
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id300mA
Drain Source On State Resistance16ohm
Transistor Case StyleTO-92
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation3W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STQ1NK80ZR-AP is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
- 100% Avalanche tested
- Extremely high dV/dt capability
- New high voltage benchmark
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
300mA
Transistor Case Style
TO-92
Rds(on) Test Voltage
10V
Power Dissipation
3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
16ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00034