Print Page
STS4DNF60L
Dual MOSFET, N Channel, 60 V, 4 A, 0.045 ohm
Image is for illustrative purposes only. Please refer to product description.
4,160 total stock globally
Need more?
4160 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $2.120 ($2.438) |
| 50+ | $1.910 ($2.1965) |
| 100+ | $1.700 ($1.955) |
| 500+ | $1.540 ($1.771) |
| 1000+ | $1.520 ($1.748) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$10.60 ($12.19 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTS4DNF60L
Order Code9935738
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel4A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.045ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.5W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The STS4DNF60L is a N-channel STripFET™ Power MOSFET for switching applications. This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- Standard outline for easy automated surface-mount assembly
- Low threshold gate drive
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
4A
Drain Source On State Resistance N Channel
0.045ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000149