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STS8DN6LF6AG
Dual MOSFET, N Channel, 60 V, 60 V, 8 A, 8 A, 0.021 ohm
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTS8DN6LF6AG
Order Code3129917RL
Technical Datasheet
1,851 total stock globally
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.490 ($1.7135) |
| 500+ | $1.250 ($1.4375) |
| 1000+ | $1.200 ($1.380) |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$149.00 ($171.35 inc GST)
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTS8DN6LF6AG
Order Code3129917RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id8A
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel8A
On Resistance Rds(on)0.021ohm
Continuous Drain Current Id P Channel8A
Drain Source On State Resistance N Channel0.021ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.021ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2.5V
No. of Pins8Pins
Power Dissipation Pd3.2W
Power Dissipation N Channel3.2W
Power Dissipation P Channel3.2W
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 3 - 168 hours
SVHCNo SVHC (21-Jan-2025)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
8A
Continuous Drain Current Id N Channel
8A
Continuous Drain Current Id P Channel
8A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.021ohm
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
3.2W
Power Dissipation P Channel
3.2W
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
0.021ohm
Drain Source On State Resistance N Channel
0.021ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
3.2W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 3 - 168 hours
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00035