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GT30J324
IGBT, 30 A, 2.45 V, 170 W, 600 V, TO-3P, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoGT30J324
Order Code1300815
Technical Datasheet
Continuous Collector Current30A
Collector Emitter Saturation Voltage2.45V
Power Dissipation170W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-3P
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Product Overview
The GT30J324 is a 4th generation N-channel silicon Insulated Gate Bipolar Transistor (IGBT) for use with high power and fast switching applications.
- Enhancement-mode
- FRD included between emitter and collector
- 2V Low saturation voltage
Applications
Power Management
Technical Specifications
Continuous Collector Current
30A
Power Dissipation
170W
Transistor Case Style
TO-3P
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.45V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0046