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XPQ1R004PB,LXHQ(O
Power MOSFET, N Channel, 40 V, 200 A, 800 µohm, L-TOGL, Surface Mount
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ManufacturerTOSHIBA
Manufacturer Part NoXPQ1R004PB,LXHQ(O
Order Code4154414
Product RangeU-MOSIX-H Series
Also Known AsXPQ1R004PB, XPQ1R004PB,LXHQ
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $5.430 ($6.2445) |
| 10+ | $3.560 ($4.094) |
| 100+ | $3.000 ($3.450) |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$5.43 ($6.24 inc GST)
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoXPQ1R004PB,LXHQ(O
Order Code4154414
Product RangeU-MOSIX-H Series
Also Known AsXPQ1R004PB, XPQ1R004PB,LXHQ
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id200A
Drain Source On State Resistance800µohm
Transistor Case StyleL-TOGL
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation230W
No. of Pins9Pins
Operating Temperature Max175°C
Product RangeU-MOSIX-H Series
QualificationAEC-Q101
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
200A
Transistor Case Style
L-TOGL
Rds(on) Test Voltage
10V
Power Dissipation
230W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
40V
Drain Source On State Resistance
800µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
9Pins
Product Range
U-MOSIX-H Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000745