OPB710F

The OPB710F series Reflective Object Sensor that consists of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor. On each sensor, the emitting diode and detector are mounted side-by-side on parallel axes. A black plastic sleeve is attached and filled with encapsulating epoxy to cover the emitter and detector. The OPB710F (“F” versions) have a filtering material added to the epoxy to reduce the effect of ambient light. The package contains an internal barrier which prevents diode emissions from reaching the sensor directly.

• Phototransistor output
• Unfocused for sensing diffuse surface
• Clear encapsulating epoxy
• Filtered to reduce the effect of visible or fluorescent light
• Short-circuit, reverse polarity and transients protection
• Flush and non-flush versions
• NPN or PNP, normally open or normally closed output
• 2m Oil-resistant PVC cable or M12 disconnect plug
• Assured traceability and best application control

Applications

Sensing & Instrumentation, Automation & Process Control, Safety, Industrial