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2N6796
Power MOSFET, N Channel, 100 V, 8 A, 0.18 ohm, TO-39, Through Hole
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ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part No2N6796
Order Code1208692
Your Part Number
Technical Datasheet
No Longer Stocked
Product Information
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part No2N6796
Order Code1208692
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id8A
Drain Source On State Resistance0.18ohm
Transistor Case StyleTO-39
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The 2N6796 is a N-channel enhancement TMOS FET offers 100V drain source voltage and 8A continuous drain current.
- 0.18Ω RDS (ON)
- -55 to 150°C Operating junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8A
Transistor Case Style
TO-39
Rds(on) Test Voltage
10V
Power Dissipation
25W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.18ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0024