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BUZ906
Power MOSFET, P Channel, 200 V, 8 A, 1.5 ohm, TO-3, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Information
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part NoBUZ906
Order Code1182827
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id8A
Drain Source On State Resistance1.5ohm
Transistor Case StyleTO-3
Transistor MountingThrough Hole
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max1.5V
Power Dissipation125W
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
The BUZ906 is a -200V P-channel Enhancement Mode Power MOSFET with high speed switching and integral protection diode designed for use in audio applications.
- High energy rating
- 60ns Turn-off time
- 120ns Turn-on time
Applications
Audio
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
8A
Transistor Case Style
TO-3
Rds(on) Test Voltage
-
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (16-Jul-2019)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
1.5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1.5V
No. of Pins
2Pins
Product Range
-
MSL
-
Technical Docs (1)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (16-Jul-2019)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0115