IRFI640GPBF
Power MOSFET, N Channel, 200 V, 9.8 A, 0.18 ohm, TO-220FP, Through Hole
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $4.230 ($4.8645) |
| 10+ | $2.610 ($3.0015) |
| 100+ | $2.320 ($2.668) |
| 500+ | $2.200 ($2.530) |
| 1000+ | $2.060 ($2.369) |
| 5000+ | $2.030 ($2.3345) |
Product Information
Product Overview
The IRFI640GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
- Isolated package
- 2.5kVRMS (t = 60s, f = 60Hz) High voltage isolation
- 4.8mm Sink to lead creepage distance
- Dynamic dV/dt rating
- Low thermal resistance
Applications
Industrial, Power Management, Commercial
Technical Specifications
N Channel
9.8A
TO-220FP
10V
40W
150°C
-
Lead (21-Jan-2025)
200V
0.18ohm
Through Hole
4V
3Pins
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-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate