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SI1016CX-T1-GE3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 600 mA, 600 mA, 0.33 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI1016CX-T1-GE3
Order Code2056711RL
Your Part Number
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.472 ($0.5428) |
| 500+ | $0.316 ($0.3634) |
| 1500+ | $0.309 ($0.3554) |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1016CX-T1-GE3
Order Code2056711RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id600mA
On Resistance Rds(on)0.33ohm
Continuous Drain Current Id N Channel600mA
Continuous Drain Current Id P Channel600mA
Drain Source On State Resistance N Channel0.33ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.33ohm
Transistor Case StyleSOT-563
Gate Source Threshold Voltage Max400mV
No. of Pins6Pins
Power Dissipation Pd220mW
Power Dissipation N Channel220mW
Power Dissipation P Channel220mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI1016CX-T1-GE3 is a N/P-channel complementary MOSFET designed for use with load switch, small signal switches and level-shift switches, battery operated systems and Portable applications. It offers high-side switching, ease in driving switches and low offset (error) voltage.
- TrenchFET® power MOSFET
- Low-voltage operation
- High-speed circuits
- 100% Rg tested
Applications
Industrial, Portable Devices, Power Management
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.33ohm
Continuous Drain Current Id P Channel
600mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.33ohm
Gate Source Threshold Voltage Max
400mV
Power Dissipation Pd
220mW
Power Dissipation P Channel
220mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
600mA
Continuous Drain Current Id N Channel
600mA
Drain Source On State Resistance N Channel
0.33ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-563
No. of Pins
6Pins
Power Dissipation N Channel
220mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002