Print Page
SI1022R-T1-GE3
Power MOSFET, N Channel, 60 V, 330 mA, 1.25 ohm, SC-75A, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
11,260 total stock globally
Need more?
11260 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $0.676 ($0.7774) |
| 50+ | $0.620 ($0.713) |
| 100+ | $0.564 ($0.6486) |
| 500+ | $0.402 ($0.4623) |
| 1500+ | $0.394 ($0.4531) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$3.38 ($3.89 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1022R-T1-GE3
Order Code2098044
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id330mA
Drain Source On State Resistance1.25ohm
Transistor Case StyleSC-75A
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation250mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Nov-2024)
Product Overview
The SI1022R-T1-GE3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers.
- 2000V Gate-source ESD protected
- Low ON-resistance
- Low threshold
- 25ns Fast switching speed
- 30pF Low input capacitance
- Low input and output leakage
- Miniature package
- Halogen-free
- Low offset voltage
- Low-voltage operation
- High-speed circuits
- Low error voltage
- Small board area
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
330mA
Transistor Case Style
SC-75A
Rds(on) Test Voltage
10V
Power Dissipation
250mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1.25ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.009