Print Page
SI1029X-T1-GE3
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 305 mA, 305 mA, 1.4 ohm
Image is for illustrative purposes only. Please refer to product description.
6,175 total stock globally
Need more?
6175 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $0.720 ($0.828) |
| 50+ | $0.626 ($0.7199) |
| 100+ | $0.532 ($0.6118) |
| 500+ | $0.465 ($0.5347) |
| 1500+ | $0.396 ($0.4554) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$3.60 ($4.14 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1029X-T1-GE3
Order Code2101477
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel305mA
Continuous Drain Current Id P Channel305mA
Drain Source On State Resistance N Channel1.4ohm
Drain Source On State Resistance P Channel1.4ohm
Transistor Case StyleSC-89
No. of Pins6Pins
Power Dissipation N Channel250mW
Power Dissipation P Channel250mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI1029X-T1-GE3 is a N/P-channel complementary MOSFET designed for use with replace digital transistor, level-shifter, battery operated systems and power supply converter circuits applications. It offers ease in driving switches, low offset (error) voltage, low-voltage operation and high-speed circuits.
- Halogen-free
- TrenchFET® power MOSFET
- Very small footprint
- High-side switching
- Low ON-resistance
- ±2V Low threshold
- 15ns Fast switching speed
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
305mA
Drain Source On State Resistance P Channel
1.4ohm
No. of Pins
6Pins
Power Dissipation P Channel
250mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
305mA
Drain Source On State Resistance N Channel
1.4ohm
Transistor Case Style
SC-89
Power Dissipation N Channel
250mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for SI1029X-T1-GE3
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000031