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SI1470DH-T1-E3
Power MOSFET, N Channel, 30 V, 4 A, 0.066 ohm, SOT-363, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1470DH-T1-E3
Order Code1497599
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id4A
Drain Source On State Resistance0.066ohm
Transistor Case StyleSOT-363
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.6V
Power Dissipation2.8W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4A
Transistor Case Style
SOT-363
Rds(on) Test Voltage
4.5V
Power Dissipation
2.8W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.066ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
6Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000135