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SI1539CDL-T1-GE3
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 700 mA, 700 mA, 0.323 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.301 ($0.3462) |
| 500+ | $0.238 ($0.2737) |
| 1500+ | $0.233 ($0.268) |
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Multiple: 5
$30.10 ($34.62 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1539CDL-T1-GE3
Order Code2056712RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id700mA
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.323ohm
Continuous Drain Current Id N Channel700mA
Continuous Drain Current Id P Channel700mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.323ohm
Drain Source On State Resistance P Channel0.323ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation Pd340mW
Power Dissipation N Channel340mW
Power Dissipation P Channel340mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI1539CDL-T1-GE3 is a N/P-channel MOSFET designed for use with DC to DC converter and load switch applications.
- Halogen-free
- 100% Rg tested
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
700mA
On Resistance Rds(on)
0.323ohm
Continuous Drain Current Id P Channel
700mA
Drain Source On State Resistance N Channel
0.323ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-363
Power Dissipation Pd
340mW
Power Dissipation P Channel
340mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
700mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.323ohm
Gate Source Threshold Voltage Max
1.2V
No. of Pins
6Pins
Power Dissipation N Channel
340mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000005