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SI1922EDH-T1-GE3
Dual MOSFET, N Channel, 20 V, 20 V, 1.3 A, 1.3 A, 0.165 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.388 ($0.4462) |
| 500+ | $0.303 ($0.3484) |
| 1000+ | $0.227 ($0.261) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$38.80 ($44.62 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1922EDH-T1-GE3
Order Code2056714RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id1.3A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.165ohm
Continuous Drain Current Id N Channel1.3A
Continuous Drain Current Id P Channel1.3A
Drain Source On State Resistance N Channel0.165ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.165ohm
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max400mV
Power Dissipation Pd1.25W
No. of Pins6Pins
Power Dissipation N Channel1.25W
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Nov-2024)
Product Overview
The SI1922EDH-T1-GE3 is a dual N-channel MOSFET intended for small to medium load applications where a miniaturized package is required. It is compatible with load switch for portable applications.
- Halogen-free
- ESD protected device
Applications
Industrial, Portable Devices, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
1.3A
On Resistance Rds(on)
0.165ohm
Continuous Drain Current Id P Channel
1.3A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.165ohm
Gate Source Threshold Voltage Max
400mV
No. of Pins
6Pins
Power Dissipation P Channel
1.25W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (07-Nov-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
1.3A
Drain Source On State Resistance N Channel
0.165ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-363
Power Dissipation Pd
1.25W
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000073