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SI2302CDS-T1-GE3
Power MOSFET, N Channel, 20 V, 2.9 A, 0.057 ohm, TO-236, Surface Mount
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.505 ($0.5808) |
| 500+ | $0.393 ($0.452) |
| 1000+ | $0.361 ($0.4152) |
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Multiple: 1
$50.50 ($58.07 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2302CDS-T1-GE3
Order Code1684049RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.9A
Drain Source On State Resistance0.057ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage8V
Gate Source Threshold Voltage Max850mV
Power Dissipation710mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI2302CDS-T1-GE3 is a 20V N-channel TrenchFET® power MOSFET for use in load switching for portable devices.
- ±8V Gate to source voltage
Applications
Power Management, Portable Devices
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.9A
Transistor Case Style
TO-236
Rds(on) Test Voltage
8V
Power Dissipation
710mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.057ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
850mV
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000008