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DEL-SI2307BDS-T1-E3
P CHANNEL MOSFET, -30V, 2.5A TO-236, FUL
Image is for illustrative purposes only. Please refer to product description.
No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoDEL-SI2307BDS-T1-E3
Order Code1571143
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id2.5A
Drain Source On State Resistance0.063ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation750mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.5A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
750mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.063ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:0
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000043