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ManufacturerVISHAY
Manufacturer Part NoSI2387DS-T1-GE3
Order Code3765809RL
Product RangeTrenchFET Gen IV
Technical Datasheet
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500+ | $0.296 ($0.3404) |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2387DS-T1-GE3
Order Code3765809RL
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id3A
Drain Source On State Resistance0.137ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
- P-channel 80V (D-S) MOSFET
- TrenchFET® Gen IV P-channel power MOSFET
- 100 % Rg and UIS tested
- Applications include load switch, circuit protection and motor drive control
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.137ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001