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SI3441BDV-T1-E3
Power MOSFET, P Channel, 20 V, 2.45 A, 0.09 ohm, TSOP, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3441BDV-T1-E3
Order Code1213157RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.45A
Drain Source On State Resistance0.09ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max850mV
Power Dissipation860mW
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2.45A
Transistor Case Style
TSOP
Rds(on) Test Voltage
4.5V
Power Dissipation
860mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jun-2015)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.09ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
850mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00008