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SI4214DDY-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 8.5 A, 8.5 A, 0.016 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4214DDY-T1-GE3
Order Code2646382RL
Product RangeTrenchFET Series
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.702 ($0.8073) |
| 500+ | $0.683 ($0.7854) |
| 1000+ | $0.664 ($0.7636) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$70.20 ($80.73 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4214DDY-T1-GE3
Order Code2646382RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id8.5A
Continuous Drain Current Id N Channel8.5A
On Resistance Rds(on)0.016ohm
Continuous Drain Current Id P Channel8.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.016ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.016ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max2.5V
No. of Pins8Pins
Power Dissipation Pd3.1W
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI4214DDY-T1-GE3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for notebook system power and low current DC-to-DC converter applications.
- Halogen-free
- TrenchFET® power MOSFET
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
8.5A
Continuous Drain Current Id P Channel
8.5A
Drain Source On State Resistance N Channel
0.016ohm
Drain Source On State Resistance P Channel
0.016ohm
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
3.1W
Power Dissipation P Channel
3.1W
Product Range
TrenchFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
8.5A
On Resistance Rds(on)
0.016ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000255