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SI4288DY-T1-GE3
Dual MOSFET, N Channel, 40 V, 40 V, 9.2 A, 9.2 A, 0.0165 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.540 ($1.771) |
| 500+ | $1.170 ($1.3455) |
| 1000+ | $1.080 ($1.242) |
| 5000+ | $0.890 ($1.0235) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$154.00 ($177.10 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4288DY-T1-GE3
Order Code2056718RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id9.2A
Continuous Drain Current Id N Channel9.2A
On Resistance Rds(on)0.0165ohm
Continuous Drain Current Id P Channel9.2A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0165ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.0165ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.2V
Power Dissipation Pd3.1W
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCLead (21-Jan-2025)
Product Overview
The SI4288DY-T1-GE3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for CCFL inverter, DC-to-DC converter and HDD applications.
- Halogen-free
- TrenchFET® power MOSFET
Applications
Industrial, Power Management, Computers & Computer Peripherals
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id N Channel
9.2A
Continuous Drain Current Id P Channel
9.2A
Drain Source On State Resistance N Channel
0.0165ohm
Drain Source On State Resistance P Channel
0.0165ohm
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
Automotive Qualification Standard
-
SVHC
Lead (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id
9.2A
On Resistance Rds(on)
0.0165ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
3.1W
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000726