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SI4435DDY-T1-E3
Power MOSFET, P Channel, 30 V, 11.4 A, 0.024 ohm, SOIC, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4435DDY-T1-E3
Order Code210144602
Technical Datasheet
Drain Source Voltage Vds30V
Continuous Drain Current Id11.4A
Drain Source On State Resistance0.024ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Overview
The SI4435DDY-T1-E3 is a 30VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and battery switch applications.
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.024ohm
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
SVHC
No SVHC (21-Jan-2025)
Continuous Drain Current Id
11.4A
Rds(on) Test Voltage
10V
Power Dissipation
5W
Operating Temperature Max
150°C
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000225