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SI4564DY-T1-GE3
Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 10 A, 10 A, 0.0145 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.540 ($1.771) |
| 500+ | $1.220 ($1.403) |
| 1000+ | $1.110 ($1.2765) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$154.00 ($177.10 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4564DY-T1-GE3
Order Code2056723RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds40V
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id10A
On Resistance Rds(on)0.0145ohm
Continuous Drain Current Id N Channel10A
Continuous Drain Current Id P Channel10A
Drain Source On State Resistance N Channel0.0145ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.0145ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max800mV
No. of Pins8Pins
Power Dissipation Pd3.1W
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Product Overview
The SI4564DY-T1-GE3 is a 40V Dual N and P-channel TrenchFET® Power MOSFET.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
Applications
Power Management
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
40V
Drain Source Voltage Vds P Channel
40V
On Resistance Rds(on)
0.0145ohm
Continuous Drain Current Id P Channel
10A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
800mV
Power Dissipation Pd
3.1W
Power Dissipation P Channel
3.1W
Product Range
-
Automotive Qualification Standard
-
SVHC
Lead (07-Nov-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id
10A
Continuous Drain Current Id N Channel
10A
Drain Source On State Resistance N Channel
0.0145ohm
Drain Source On State Resistance P Channel
0.0145ohm
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000253